Equivalent Oxide Thickness

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• Equivalent oxide thickness — Der englische Begriff equivalent oxide thickness (EOT, dt. »gleichwertige Oxidschichtdicke«) bezeichnet in der Halbleitertechnik eine Vergleichsgröße einer dünnen Schicht, hauptsächlich von Schichten aus neuartigen High k Dielektrika mit… …   Deutsch Wikipedia

• Metal oxide adhesion — The strength of metal oxide adhesion effectively determines the wetting of the metal oxide interface. The strength of this adhesion is important, for instance, in production of light bulbs and fiber matrix composites that depend on the… …   Wikipedia

• High-k-Dielektrikum — Als High k Dielektrikum wird in der Halbleitertechnik ein Material bezeichnet, das eine höhere Dielektrizitätszahl aufweist als herkömmliches Siliziumdioxid (εr = 3,9) oder Oxinitride (εr < 6). Die Bezeichnung „high k“ ist… …   Deutsch Wikipedia

• Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… …   Wikipedia

• EOT — is an abbreviation for:* Embedded OpenType, a font file format * End of tape, a term in in magnetic tape data storage * End Of Train device, see Flashing rear end device, as used by the railroad industry * End of transmission character, a… …   Wikipedia

• 45 nanometer — Per the [http://www.itrs.net/reports.html International Technology Roadmap for Semiconductors] , the 45 nm technology node should refer to the average half pitch of a memory cell manufactured at around the 2007 2008 time frame.Matsushita and… …   Wikipedia

• EOT — ist die Abkürzung für: End of Thread, siehe Liste von Abkürzungen (Netzjargon)#E End of Transmission, ein Steuerzeichen Embedded OpenType, ein Fontformat Equation of time, Englisch für Zeitgleichung Electric Overhead Travelling, Englisch für… …   Deutsch Wikipedia

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• Fluorescence interference contrast microscopy — Fluorescence interference contrast (FLIC) microscopy is a microscopic technique developed to achieve z resolution on the nanometer scale. FLIC occurs whenever fluorescent objects are in the vicinity of a reflecting surface (e.g. Si wafer). The… …   Wikipedia

• CMOS — For other uses, see CMOS (disambiguation). CMOS inverter (NOT logic gate) Complementary metal–oxide–semiconductor (CMOS) (   …   Wikipedia

• 22 nanometer — The 22 nanometer (22 nm) node is the CMOS process step following 32 nm. It is expected to be reached by semiconductor companies in the 2011 ndash;2012 timeframe. At that time, the typical half pitch for a memory cell would be around 22 nm. The… …   Wikipedia